Electroluminescence from single nanowires by tunnel injection: an experimental study

We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type subs...

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Bibliographic Details
Published in:arXiv.org 2007-08
Main Authors: Zimmler, Mariano A, Bao, Jiming, Shalish, Ilan, Wei, Yi, Yoon, Joonah, Narayanamurti, Venkatesh, Capasso, Federico
Format: Article
Language:English
Subjects:
Bias
Diodes
Electroluminescence
Gallium nitrides
Light emitting diodes
Nanowires
P-n junctions
Silicon substrates
Ultraviolet radiation
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Summary:We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.
ISSN:2331-8422
DOI:10.48550/arxiv.0708.1266