Electroluminescence from single nanowires by tunnel injection: an experimental study

We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type subs...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2007-08
Main Authors: Zimmler, Mariano A, Bao, Jiming, Shalish, Ilan, Wei, Yi, Yoon, Joonah, Narayanamurti, Venkatesh, Capasso, Federico
Format: Article
Language:English
Subjects:
Bias
Diodes
Electroluminescence
Gallium nitrides
Light emitting diodes
Nanowires
P-n junctions
Silicon substrates
Ultraviolet radiation
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page
container_issue
container_start_page
container_title arXiv.org
container_volume
creator Zimmler, Mariano A
Bao, Jiming
Shalish, Ilan
Wei, Yi
Yoon, Joonah
Narayanamurti, Venkatesh
Capasso, Federico
description We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.
doi_str_mv 10.48550/arxiv.0708.1266
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2092488966</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2092488966</sourcerecordid><originalsourceid>FETCH-LOGICAL-a516-20c57085a5721a7ab86c66b2661992cfb3d1c649793729bde5e5f9ba53b560c43</originalsourceid><addsrcrecordid>eNotjs1LwzAchoMgOObuHgOeO_PRfHmTMXUw8NL7SNJfJaVNZtLq9t9b0NNzep_3QeiBkm2thSBPNl_C95YooreUSXmDVoxzWumasTu0KaUnhDCpmBB8hZr9AH7KaZjHEKF4iB5wl9OIS4ifA-BoY_oJGQp2VzzNMcKAQ-yXUUjxGduI4XKGHEaIkx1wmeb2eo9uOzsU2PxzjZrXfbN7r44fb4fdy7GygsqKES-WSGGFYtQq67T0UrolmRrDfOd4S72sjTJcMeNaECA646zgTkjia75Gj3_ac05fM5Tp1Kc5x-XxxIhhtdZGSv4L-z5SfQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2092488966</pqid></control><display><type>article</type><title>Electroluminescence from single nanowires by tunnel injection: an experimental study</title><source>Publicly Available Content Database</source><creator>Zimmler, Mariano A ; Bao, Jiming ; Shalish, Ilan ; Wei, Yi ; Yoon, Joonah ; Narayanamurti, Venkatesh ; Capasso, Federico</creator><creatorcontrib>Zimmler, Mariano A ; Bao, Jiming ; Shalish, Ilan ; Wei, Yi ; Yoon, Joonah ; Narayanamurti, Venkatesh ; Capasso, Federico</creatorcontrib><description>We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.0708.1266</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Bias ; Diodes ; Electroluminescence ; Gallium nitrides ; Light emitting diodes ; Nanowires ; P-n junctions ; Silicon substrates ; Ultraviolet radiation</subject><ispartof>arXiv.org, 2007-08</ispartof><rights>Notwithstanding the ProQuest Terms and conditions, you may use this content in accordance with the associated terms available at http://arxiv.org/abs/0708.1266.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/2092488966?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>780,784,25753,27925,37012,44590</link.rule.ids></links><search><creatorcontrib>Zimmler, Mariano A</creatorcontrib><creatorcontrib>Bao, Jiming</creatorcontrib><creatorcontrib>Shalish, Ilan</creatorcontrib><creatorcontrib>Wei, Yi</creatorcontrib><creatorcontrib>Yoon, Joonah</creatorcontrib><creatorcontrib>Narayanamurti, Venkatesh</creatorcontrib><creatorcontrib>Capasso, Federico</creatorcontrib><title>Electroluminescence from single nanowires by tunnel injection: an experimental study</title><title>arXiv.org</title><description>We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.</description><subject>Bias</subject><subject>Diodes</subject><subject>Electroluminescence</subject><subject>Gallium nitrides</subject><subject>Light emitting diodes</subject><subject>Nanowires</subject><subject>P-n junctions</subject><subject>Silicon substrates</subject><subject>Ultraviolet radiation</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNotjs1LwzAchoMgOObuHgOeO_PRfHmTMXUw8NL7SNJfJaVNZtLq9t9b0NNzep_3QeiBkm2thSBPNl_C95YooreUSXmDVoxzWumasTu0KaUnhDCpmBB8hZr9AH7KaZjHEKF4iB5wl9OIS4ifA-BoY_oJGQp2VzzNMcKAQ-yXUUjxGduI4XKGHEaIkx1wmeb2eo9uOzsU2PxzjZrXfbN7r44fb4fdy7GygsqKES-WSGGFYtQq67T0UrolmRrDfOd4S72sjTJcMeNaECA646zgTkjia75Gj3_ac05fM5Tp1Kc5x-XxxIhhtdZGSv4L-z5SfQ</recordid><startdate>20070809</startdate><enddate>20070809</enddate><creator>Zimmler, Mariano A</creator><creator>Bao, Jiming</creator><creator>Shalish, Ilan</creator><creator>Wei, Yi</creator><creator>Yoon, Joonah</creator><creator>Narayanamurti, Venkatesh</creator><creator>Capasso, Federico</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20070809</creationdate><title>Electroluminescence from single nanowires by tunnel injection: an experimental study</title><author>Zimmler, Mariano A ; Bao, Jiming ; Shalish, Ilan ; Wei, Yi ; Yoon, Joonah ; Narayanamurti, Venkatesh ; Capasso, Federico</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a516-20c57085a5721a7ab86c66b2661992cfb3d1c649793729bde5e5f9ba53b560c43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Bias</topic><topic>Diodes</topic><topic>Electroluminescence</topic><topic>Gallium nitrides</topic><topic>Light emitting diodes</topic><topic>Nanowires</topic><topic>P-n junctions</topic><topic>Silicon substrates</topic><topic>Ultraviolet radiation</topic><toplevel>online_resources</toplevel><creatorcontrib>Zimmler, Mariano A</creatorcontrib><creatorcontrib>Bao, Jiming</creatorcontrib><creatorcontrib>Shalish, Ilan</creatorcontrib><creatorcontrib>Wei, Yi</creatorcontrib><creatorcontrib>Yoon, Joonah</creatorcontrib><creatorcontrib>Narayanamurti, Venkatesh</creatorcontrib><creatorcontrib>Capasso, Federico</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>ProQuest Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering collection</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zimmler, Mariano A</au><au>Bao, Jiming</au><au>Shalish, Ilan</au><au>Wei, Yi</au><au>Yoon, Joonah</au><au>Narayanamurti, Venkatesh</au><au>Capasso, Federico</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electroluminescence from single nanowires by tunnel injection: an experimental study</atitle><jtitle>arXiv.org</jtitle><date>2007-08-09</date><risdate>2007</risdate><eissn>2331-8422</eissn><abstract>We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.0708.1266</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier EISSN: 2331-8422
ispartof arXiv.org, 2007-08
issn 2331-8422
language eng
recordid cdi_proquest_journals_2092488966
source Publicly Available Content Database
subjects Bias
Diodes
Electroluminescence
Gallium nitrides
Light emitting diodes
Nanowires
P-n junctions
Silicon substrates
Ultraviolet radiation
title Electroluminescence from single nanowires by tunnel injection: an experimental study
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T14%3A20%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electroluminescence%20from%20single%20nanowires%20by%20tunnel%20injection:%20an%20experimental%20study&rft.jtitle=arXiv.org&rft.au=Zimmler,%20Mariano%20A&rft.date=2007-08-09&rft.eissn=2331-8422&rft_id=info:doi/10.48550/arxiv.0708.1266&rft_dat=%3Cproquest%3E2092488966%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a516-20c57085a5721a7ab86c66b2661992cfb3d1c649793729bde5e5f9ba53b560c43%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2092488966&rft_id=info:pmid/&rfr_iscdi=true