GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range

GaSb/GaAlAsSb uncooled photodiodes for the 1 . 1–1 . 85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: n = 2 × 10 15 cm –3 . The capacitance of the photodiodes...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-09, Vol.52 (9), p.1215-1220
Main Authors: Kunitsyna, E. V., Andreev, I. A., Konovalov, G. G., Ivanov, E. V., Pivovarova, A. A., Il’inskaya, N. D., Yakovlev, Yu. P.
Format: Article
Language:English
Subjects:
Carrier density
Dark current
Magnetic Materials
Magnetism
Melts
Photodiodes
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Response time
Spectra
Spectral sensitivity
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Summary:GaSb/GaAlAsSb uncooled photodiodes for the 1 . 1–1 . 85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: n = 2 × 10 15 cm –3 . The capacitance of the photodiodes is 70–110 pF for a sensitive -area diameter of 300 μm and 150–250 pF for a diameter of 500 μm. The photodiodes are characterized by a high (for GaSb devices) spectral sensitivity S λ = 0 . 95 A/W at the maximum, a relatively low reverse dark current density j = (4–9) × 10 –3 A/cm 2 at U rev = 1 . 0–2 . 0 V, and high-speed performance (response time 5–10 ns).
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618090099