Electrical and optical properties of MoS\(_{2}\),MoO\(_{x=2,3}\)(MoSO)/RGO heterostructure

We report on transport properties of the controllable large area MoSO/Reduced graphene oxide(RGO) heterostructures electrodeposited on FTO substrates and its comparision with theoretical calculations on MoSo/Gr. I-V characteristics of the heterostructure made by P or n-type MoSO, exhibit Schottkey b...

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Bibliographic Details
Published in:arXiv.org 2018-08
Main Authors: Erfanifam, S, Jamilpanah, L, Sangpour, P, Hamdi, M, Haddadi, F, Erfanifam, M, Chanda, G, Herrmannsdörfer, T, Sazgari, V, Mohseni, M
Format: Article
Language:English
Subjects:
Bilayers
Current voltage characteristics
Electronic properties
Electrons
Energy gap
Energy storage
Fermi level
Graphene
Heterostructures
Mathematical analysis
Monolayers
Optical properties
Optoelectronic devices
Substrates
Transport properties
Valence band
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Summary:We report on transport properties of the controllable large area MoSO/Reduced graphene oxide(RGO) heterostructures electrodeposited on FTO substrates and its comparision with theoretical calculations on MoSo/Gr. I-V characteristics of the heterostructure made by P or n-type MoSO, exhibit Schottkey behavior in the interface similar to the MoS\(_{2}\)/Gr ones. Theoretical calculations show significant effects of lateral layer size as well as layer number in the electronic properties. In monolayer MoS\(_{2}\)/Gr by increasing the lateral size the energy gap disappears and the Fermi level shifts towards valence band. In the case of bilayer MoS\(_{2}\) on bilayer Gr structure, the Fermi level shift is again towards valence band but, the gap is slightly higher than the monolayer structure. We found that the experimentally obtained results for n-type MoSO/RGO results are qualitatively in agreement with theoretical calculations of the MoS\(_{2}\)/Gr heterostructure. These results are beneficial to understand and design the high quality and low cost MoSO/RGO based electronic, optoelectronic and energy storage devices or cocatalysts.
ISSN:2331-8422