Solution processed CuI/n-Si junction device annealed with and without iodine steam for ultraviolet photodetector applications

• Published in: Journal of materials science. Materials in electronics 2018-11, Vol.29 (21), p.18622-18627
• Main Authors: Wang, Yu Wu, Chuang, Cheng Yu
• Format: Article
• Language: English
• Subjects: Absorption spectra; Annealing; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystallization; Diffraction; Diffraction patterns; Electron microscopes; Field emission microscopy; Hall effect; Iodine; Lattice vacancies; Materials Science; Optical and Electronic Materials; Photoelectric effect; Photoelectric emission; Photometers; Ultraviolet detectors; Ultraviolet radiation; Vacancies; X-ray diffraction
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-018-9980-5

We report the fabrication and characterization of a facile and low-cost solution processed CuI/Si junction device for ultraviolet photodetector applications. The properties of CuI films are analyzed by Hall-effect measurement, X-ray diffraction pattern, ultraviolet–visible absorption spectrum, and field emission scanning electron microscope. The amount of iodine vacancies of CuI could be adjusted through subsequence anneals with/without iodine steam. Moderate process would improve the CuI crystallization and reduce iodine vacancies, and so thus raise the photocurrent and photo responsivity of CuI/Si junction. The made junction device performs a maximum I photo /I dark ratio of 3 × 10 4 to an ultraviolet light of 365 nm wavelength.