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Silicon on Dust Substrate: The Effect of Powder Size on Ribbon Production

The silicon on dust substrate process is a two‐step technique to produce multicrystalline silicon (mc‐Si) ribbons directly from gaseous feedstock. Silicon pre‐ribbons of very small grain size (ranging from nano to microcrystalline), with a porous structure and dimensions up to 25 × 100 mm2, are obta...

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Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2018-09, Vol.215 (17), p.n/a
Main Authors: Serra, Filipe C., Silva, José A., Serra, João M., Vallêra, António M.
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Silva, José A.
Serra, João M.
Vallêra, António M.
description The silicon on dust substrate process is a two‐step technique to produce multicrystalline silicon (mc‐Si) ribbons directly from gaseous feedstock. Silicon pre‐ribbons of very small grain size (ranging from nano to microcrystalline), with a porous structure and dimensions up to 25 × 100 mm2, are obtained using an inline optical chemical vapor deposition (CVD) system operating at atmospheric pressure and at low temperatures (
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2101220770</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2101220770</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2722-8e52295c6db659a620239d8a7a21403cdc6f017777fe2f892054e051a4c079733</originalsourceid><addsrcrecordid>eNqFkM1LAzEQxYMoWKtXzwHPWyezH9l4K7VqoWBx6zlkswmm1KYmu5T617ulUo8OA28OvzfDPEJuGYwYAN5vY1QjBMaBQY5nZMDKApMiZeL8NANckqsYVwBZnnE2ILPKrZ32G9r3YxdbWnV1bINqzQNdfhg6tdbolnpLF37XmEAr920O8Jur614WwTedbp3fXJMLq9bR3PzqkLw_TZeTl2T--jybjOeJRo6YlCZHFLkumrrIhSoQMBVNqbhClkGqG13Y_oe-rEFbCoQ8M5AzlWnggqfpkNwd926D_-pMbOXKd2HTn5TIgCEC59BToyOlg48xGCu3wX2qsJcM5CEueYhLnuLqDeJo2Lm12f9Dy0VVjf-8P-E1bD8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2101220770</pqid></control><display><type>article</type><title>Silicon on Dust Substrate: The Effect of Powder Size on Ribbon Production</title><source>Wiley</source><creator>Serra, Filipe C. ; Silva, José A. ; Serra, João M. ; Vallêra, António M.</creator><creatorcontrib>Serra, Filipe C. ; Silva, José A. ; Serra, João M. ; Vallêra, António M.</creatorcontrib><description>The silicon on dust substrate process is a two‐step technique to produce multicrystalline silicon (mc‐Si) ribbons directly from gaseous feedstock. Silicon pre‐ribbons of very small grain size (ranging from nano to microcrystalline), with a porous structure and dimensions up to 25 × 100 mm2, are obtained using an inline optical chemical vapor deposition (CVD) system operating at atmospheric pressure and at low temperatures (&lt;600 °C). Using silane as the gaseous precursor, nano or microcrystalline silicon layers can be grown, on top of silicon powder substrates, moving at constant speed, and crossing three hot deposition regions several times. The growth rates (GR) vary from 13.4 to 73.2 μm min−1, depending on the grain size of silicon powder. The last step is a floating zone (FZ) recrystallization technique, where the silicon pre‐ribbons obtained in the CVD step, become solid mc‐Si ribbons. The success of recrystallization depends on the grain size of silicon powder used as substrate on the CVD step, with lower grain sizes powders delivering better results. For the lower size powder substrates, multi‐crystalline areas of 5–20 mm2 were obtained, with an average crystal size in the (0.1; 1) mm range. A two‐step method to obtain crystalline silicon ribbons from gaseous feedstock is presented. The impact of the silicon powder size used as substrate on the chemical vapor deposition (CVD) step to produce amorphous silicon ribbons is analyzed. After a floating zone (FZ) recrystallization technique, multi‐crystalline areas of 5–20 mm2 were obtained, with an average crystal size in the (0.1; 1) mm range.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201701052</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>Chemical vapor deposition ; Dust ; Floating structures ; floating zone ; Grain size ; Organic chemistry ; Recrystallization ; Silicon ; silicon powder substrates ; silicon ribbons ; Silicon substrates</subject><ispartof>Physica status solidi. A, Applications and materials science, 2018-09, Vol.215 (17), p.n/a</ispartof><rights>2018 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><rights>2018 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2722-8e52295c6db659a620239d8a7a21403cdc6f017777fe2f892054e051a4c079733</cites><orcidid>0000-0002-9052-4435</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Serra, Filipe C.</creatorcontrib><creatorcontrib>Silva, José A.</creatorcontrib><creatorcontrib>Serra, João M.</creatorcontrib><creatorcontrib>Vallêra, António M.</creatorcontrib><title>Silicon on Dust Substrate: The Effect of Powder Size on Ribbon Production</title><title>Physica status solidi. A, Applications and materials science</title><description>The silicon on dust substrate process is a two‐step technique to produce multicrystalline silicon (mc‐Si) ribbons directly from gaseous feedstock. Silicon pre‐ribbons of very small grain size (ranging from nano to microcrystalline), with a porous structure and dimensions up to 25 × 100 mm2, are obtained using an inline optical chemical vapor deposition (CVD) system operating at atmospheric pressure and at low temperatures (&lt;600 °C). Using silane as the gaseous precursor, nano or microcrystalline silicon layers can be grown, on top of silicon powder substrates, moving at constant speed, and crossing three hot deposition regions several times. The growth rates (GR) vary from 13.4 to 73.2 μm min−1, depending on the grain size of silicon powder. The last step is a floating zone (FZ) recrystallization technique, where the silicon pre‐ribbons obtained in the CVD step, become solid mc‐Si ribbons. The success of recrystallization depends on the grain size of silicon powder used as substrate on the CVD step, with lower grain sizes powders delivering better results. For the lower size powder substrates, multi‐crystalline areas of 5–20 mm2 were obtained, with an average crystal size in the (0.1; 1) mm range. A two‐step method to obtain crystalline silicon ribbons from gaseous feedstock is presented. The impact of the silicon powder size used as substrate on the chemical vapor deposition (CVD) step to produce amorphous silicon ribbons is analyzed. After a floating zone (FZ) recrystallization technique, multi‐crystalline areas of 5–20 mm2 were obtained, with an average crystal size in the (0.1; 1) mm range.</description><subject>Chemical vapor deposition</subject><subject>Dust</subject><subject>Floating structures</subject><subject>floating zone</subject><subject>Grain size</subject><subject>Organic chemistry</subject><subject>Recrystallization</subject><subject>Silicon</subject><subject>silicon powder substrates</subject><subject>silicon ribbons</subject><subject>Silicon substrates</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqFkM1LAzEQxYMoWKtXzwHPWyezH9l4K7VqoWBx6zlkswmm1KYmu5T617ulUo8OA28OvzfDPEJuGYwYAN5vY1QjBMaBQY5nZMDKApMiZeL8NANckqsYVwBZnnE2ILPKrZ32G9r3YxdbWnV1bINqzQNdfhg6tdbolnpLF37XmEAr920O8Jur614WwTedbp3fXJMLq9bR3PzqkLw_TZeTl2T--jybjOeJRo6YlCZHFLkumrrIhSoQMBVNqbhClkGqG13Y_oe-rEFbCoQ8M5AzlWnggqfpkNwd926D_-pMbOXKd2HTn5TIgCEC59BToyOlg48xGCu3wX2qsJcM5CEueYhLnuLqDeJo2Lm12f9Dy0VVjf-8P-E1bD8</recordid><startdate>20180910</startdate><enddate>20180910</enddate><creator>Serra, Filipe C.</creator><creator>Silva, José A.</creator><creator>Serra, João M.</creator><creator>Vallêra, António M.</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-9052-4435</orcidid></search><sort><creationdate>20180910</creationdate><title>Silicon on Dust Substrate: The Effect of Powder Size on Ribbon Production</title><author>Serra, Filipe C. ; Silva, José A. ; Serra, João M. ; Vallêra, António M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2722-8e52295c6db659a620239d8a7a21403cdc6f017777fe2f892054e051a4c079733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Chemical vapor deposition</topic><topic>Dust</topic><topic>Floating structures</topic><topic>floating zone</topic><topic>Grain size</topic><topic>Organic chemistry</topic><topic>Recrystallization</topic><topic>Silicon</topic><topic>silicon powder substrates</topic><topic>silicon ribbons</topic><topic>Silicon substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Serra, Filipe C.</creatorcontrib><creatorcontrib>Silva, José A.</creatorcontrib><creatorcontrib>Serra, João M.</creatorcontrib><creatorcontrib>Vallêra, António M.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Serra, Filipe C.</au><au>Silva, José A.</au><au>Serra, João M.</au><au>Vallêra, António M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Silicon on Dust Substrate: The Effect of Powder Size on Ribbon Production</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><date>2018-09-10</date><risdate>2018</risdate><volume>215</volume><issue>17</issue><epage>n/a</epage><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>The silicon on dust substrate process is a two‐step technique to produce multicrystalline silicon (mc‐Si) ribbons directly from gaseous feedstock. Silicon pre‐ribbons of very small grain size (ranging from nano to microcrystalline), with a porous structure and dimensions up to 25 × 100 mm2, are obtained using an inline optical chemical vapor deposition (CVD) system operating at atmospheric pressure and at low temperatures (&lt;600 °C). Using silane as the gaseous precursor, nano or microcrystalline silicon layers can be grown, on top of silicon powder substrates, moving at constant speed, and crossing three hot deposition regions several times. The growth rates (GR) vary from 13.4 to 73.2 μm min−1, depending on the grain size of silicon powder. The last step is a floating zone (FZ) recrystallization technique, where the silicon pre‐ribbons obtained in the CVD step, become solid mc‐Si ribbons. The success of recrystallization depends on the grain size of silicon powder used as substrate on the CVD step, with lower grain sizes powders delivering better results. For the lower size powder substrates, multi‐crystalline areas of 5–20 mm2 were obtained, with an average crystal size in the (0.1; 1) mm range. A two‐step method to obtain crystalline silicon ribbons from gaseous feedstock is presented. The impact of the silicon powder size used as substrate on the chemical vapor deposition (CVD) step to produce amorphous silicon ribbons is analyzed. After a floating zone (FZ) recrystallization technique, multi‐crystalline areas of 5–20 mm2 were obtained, with an average crystal size in the (0.1; 1) mm range.</abstract><cop>Weinheim</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/pssa.201701052</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-9052-4435</orcidid></addata></record>
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subjects Chemical vapor deposition
Dust
Floating structures
floating zone
Grain size
Organic chemistry
Recrystallization
Silicon
silicon powder substrates
silicon ribbons
Silicon substrates
title Silicon on Dust Substrate: The Effect of Powder Size on Ribbon Production
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T14%3A55%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Silicon%20on%20Dust%20Substrate:%20The%20Effect%20of%20Powder%20Size%20on%20Ribbon%20Production&rft.jtitle=Physica%20status%20solidi.%20A,%20Applications%20and%20materials%20science&rft.au=Serra,%20Filipe%20C.&rft.date=2018-09-10&rft.volume=215&rft.issue=17&rft.epage=n/a&rft.issn=1862-6300&rft.eissn=1862-6319&rft_id=info:doi/10.1002/pssa.201701052&rft_dat=%3Cproquest_cross%3E2101220770%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c2722-8e52295c6db659a620239d8a7a21403cdc6f017777fe2f892054e051a4c079733%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2101220770&rft_id=info:pmid/&rfr_iscdi=true