Monitoring radiation damage in the LHCb Tracker Turicensis

This paper presents the techniques used to monitor radiation damage in the LHCb Tracker Turicensis during the LHC Runs 1 and 2. Bulk leakage currents in the silicon sensors were monitored continuously, while the full depletion voltages of the sensors were estimated at regular intervals by performing...

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Bibliographic Details
Published in:arXiv.org 2020-08
Main Authors: C Abellan Beteta, Atzeni, M, Battista, V, Bursche, A, Dey, B, A Dosil Suarez, Elsasser, C, A Fernandez Prieto, J Fu, Graverini, E, Komarov, I, E Lemos Cid, Lionetto, F, Mauri, A, Merli, A, Pais, P R, E Perez Trigo, M del Pilar Peco Regales, Stefko, P, Steinkamp, O, Storaci, B, Tobin, M, Weiden, A
Format: Article
Language:English
Subjects:
Charge efficiency
Depletion
Electric potential
Leakage
Luminosity
Radiation damage
Sensors
Silicon
Online Access:Get full text
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Summary:This paper presents the techniques used to monitor radiation damage in the LHCb Tracker Turicensis during the LHC Runs 1 and 2. Bulk leakage currents in the silicon sensors were monitored continuously, while the full depletion voltages of the sensors were estimated at regular intervals by performing dedicated scans of the charge collection efficiency as a function of the applied bias voltage. Predictions of the expected leakage currents and full depletion voltages are extracted from the simulated radiation profile, the luminosity delivered by the LHC, and the thermal history of the silicon sensors. Good agreement between measurements and predictions is found.
ISSN:2331-8422
DOI:10.48550/arxiv.1809.05063