Tin-vacancy color centers in micro- and polycrystalline diamonds synthesized at high pressures

Here we report in situ formation of tin-vacancy color centers in microcrystalline and aggregated diamonds synthesized in Sn-C growth system at pressure of 8–9 GPa and temperatures of 1700–2000 K. Bright zero phonon line at 620 nm and a broad line at 660 nm in its sideband were only features in lumin...

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Bibliographic Details
Published in:Diamond and related materials 2018-08, Vol.87, p.223-227
Main Authors: Ekimov, E.A., Lyapin, S.G., Kondrin, M.V.
Format: Article
Language:English
Subjects:
Chemical elements
Chemical synthesis
Color centers
Diamond
Diamonds
HPHT
Luminescence
Microcrystals
Organic chemistry
Photoluminescence
Polycrystalline diamond
Raman
Single crystals
Synthesis
Tin
Vacancies
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Summary:Here we report in situ formation of tin-vacancy color centers in microcrystalline and aggregated diamonds synthesized in Sn-C growth system at pressure of 8–9 GPa and temperatures of 1700–2000 K. Bright zero phonon line at 620 nm and a broad line at 660 nm in its sideband were only features in luminescence of the center in single microcrystals at room temperature. Diluting the growth system by lighter chemical elements, such as hydrogen and oxygen, with higher chemical affinity to carbon was shown to prevent doping of diamond with Sn. Synthesis of diamond crystals with SnV center in double Sn-C growth system under pressure is very important for understanding the nature of this new color center as well as perspectives of its practical usage. [Display omitted] •Diamond was in situ doped with Sn during the synthesis under pressure.•The synthesis was carried out at 8–9 GPa and 1700–2000 K in Sn-C growth system.•Bright luminescence of SnV color centers at 620 nm was detected in microdiamonds.•Lighter chemical elements in the growth system prevent doping of diamond with Sn.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2018.06.014