Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

• Published in: Journal of applied physics 2018-10, Vol.124 (15)
• Main Authors: Castán, H., Dueñas, S., García, H., Ossorio, O. G., Domínguez, L. A., Sahelices, B., Miranda, E., González, M. B., Campabadal, F.
• Format: Article
• Language: English
• Subjects: Applied physics; Bias; Electric potential; Electrical impedance; Hafnium oxide; Initial conditions; Memory devices; Parameters; Power consumption; Random access memory; Resistance; Static random access memory; Susceptance; Waveforms
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.5024836

A thorough study of the admittance of TiN/Ti/HfO2/W bipolar resistive memories [resistance random access memory (RRAM)] was carried out under different bias conditions and in a wide range of ac signal frequencies. We demonstrate that a continuum of intermediate states can be obtained by applying appropriate dc bias waveforms. Cumulative writing and erasing admittance cycles were performed by applying triangular voltage waveform of increasing amplitude. The influence of the initial conditions on the variation of the real (conductance) and imaginary (susceptance) components of the admittance is described. An accurate control of the memory state is achieved both in terms of the conductance and the susceptance by means of an adequate selection of the voltage values previously applied. A method to obtain three-dimensional voltage-conductance-susceptance state-plots is described in detail. Memory maps of admittance parameters as a function of the programming voltage are made by sensing the memory state at 0 V, without static power consumption. The multilevel nature of RRAM devices and their suitability for neuromorphic computation are demonstrated.