The Determining Role of the (HF2)– Ion in the Formation of Pores in Silicon in Its Electrochemical Etching with Hydrofluoric Acid Solutions

A model of the chemical interaction of Si with the (HF 2 ) – ion was propsoed to explain some experimental data on the formation of porous silicon.

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Bibliographic Details
Published in:Russian journal of inorganic chemistry 2018-09, Vol.63 (9), p.1236-1242
Main Authors: Abramova, E. N., Khort, A. M., Yakovenko, A. G., Slipchenko, E. A., Kornilova, D. S., Tsygankova, M. V., Shvets, V. I.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Electrochemical etching
Hydrofluoric acid
Inorganic Chemistry
Organic chemistry
Physical Chemistry of Solutions
Porous silicon
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Description
Summary:A model of the chemical interaction of Si with the (HF 2 ) – ion was propsoed to explain some experimental data on the formation of porous silicon.
ISSN:0036-0236
1531-8613
DOI:10.1134/S0036023618090024