Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays

The characteristics of detectors of soft-X and γ rays based on high-purity epitaxial GaAs layers are discussed. The characteristics of detectors with different rectifying contacts are compared, that is, those with a Schottky barrier and a p – n junction. The spectral characteristics of the manufactu...

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Bibliographic Details
Published in:Instruments and experimental techniques (New York) 2018-09, Vol.61 (5), p.665-672
Main Authors: Chernykh, S. V., Chernykh, A. V., Chubenko, A. P., Pavlyuchenko, L. N., Sveshnikov, Yu. N., Glybin, Yu. N., Konovalov, M. P., Panichkin, A. V., Didenko, S. I.
Format: Article
Language:English
Subjects:
Detectors
Electrical Engineering
Gamma rays
Measurement Science and Instrumentation
Nuclear Experimental Technique
P-n junctions
Physical Chemistry
Physics
Physics and Astronomy
Purity
Sensors
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Summary:The characteristics of detectors of soft-X and γ rays based on high-purity epitaxial GaAs layers are discussed. The characteristics of detectors with different rectifying contacts are compared, that is, those with a Schottky barrier and a p – n junction. The spectral characteristics of the manufactured detectors that were obtained under the irradiation by 57 Co and 241 Am sources at different bias voltages and in a photovoltaic mode and the simulation results using the Geant 3.21 software package are presented.
ISSN:0020-4412
1608-3180
DOI:10.1134/S0020441218040176