Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors

We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We di...

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Bibliographic Details
Published in:arXiv.org 2018-09
Main Authors: Gluschke, J G, Seidl, J, Lyttleton, R W, Carrad, D J, Cochrane, J W, Lehmann, S, Samuelson, L, Micolich, A P
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
Biocompatibility
Electronic devices
Field effect transistors
Insulators
Nanowires
Organic chemistry
Semiconductor devices
Substrates
Thick films
Thin films
Transistors
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Summary:We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of
ISSN:2331-8422
DOI:10.48550/arxiv.1809.10471