Non-Markovian feature of the classical Hall effect

The classical Hall effect resulting from the impact of external magnetic and electric fields on the non-Markovian dynamics of charge carriers is studied. The dependence of the tangent of the Hall angle on the magnetic field is derived and compared with the experimental data for Zn. The method is pro...

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Bibliographic Details
Published in:The European physical journal. B, Condensed matter physics Condensed matter physics, 2020-02, Vol.91 (10), Article 223
Main Authors: Abdurakhmanov, Ilkhom B., Adamian, Gurgen G., Antonenko, Nikolay V., Kanokov, Zakir
Format: Article
Language:English
Subjects:
Complex Systems
Computer memory
Condensed Matter Physics
Current carriers
Dependence
Electric fields
Electromagnetism
Fluid- and Aerodynamics
Hall effect
Magnetic fields
Magnetism
Markov processes
Physics
Physics and Astronomy
Regular Article
Solid State Physics
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Summary:The classical Hall effect resulting from the impact of external magnetic and electric fields on the non-Markovian dynamics of charge carriers is studied. The dependence of the tangent of the Hall angle on the magnetic field is derived and compared with the experimental data for Zn. The method is proposed to determine experimentally the memory time in a system.
ISSN:1434-6028
1434-6036
DOI:10.1140/epjb/e2018-90385-0