Identifying threading dislocation types in ammonothermally grown bulk a-GaN by confocal Raman 3-D imaging of volumetric stress distribution

This study demonstrates all-optical Raman scattering study of dislocations in ammonothermally grown α-GaN crystal and identifies an edge ... -type threading dislocation (TD) using a confocal Raman 3-D imaging technique. These findings make possible the characterization of volumetric stress field and...

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Bibliographic Details
Published in:Journal of crystal growth 2018-10, Vol.499, p.47
Main Authors: Holmi, JT, Bairamov, BH, Suihkonen, S, Lipsanen, H
Format: Article
Language:English
Subjects:
Bulk density
Crystal growth
Raman spectra
Scattering
Scientific imaging
Single crystals
Stress concentration
Stress distribution
Stress-strain curves
Threading dislocations
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Summary:This study demonstrates all-optical Raman scattering study of dislocations in ammonothermally grown α-GaN crystal and identifies an edge ... -type threading dislocation (TD) using a confocal Raman 3-D imaging technique. These findings make possible the characterization of volumetric stress field and low TD density distributions over a large area on bulk α-GaN single crystal. The dislocation type effects on Raman shift are also discussed in detail (in order to identify the edge ... -type and mixed ... -type TDs, and theorize the invisibility of the screw ... -type TDs). Authors are not aware of any previous reports using the confocal Raman 3-D imaging to identify the edge ... -type and mixed ... -type TDs. (ProQuest: ... denotes formulae omitted.)
ISSN:0022-0248
1873-5002