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InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a...

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Bibliographic Details
Published in:Optical materials express 2018-07, Vol.8 (7), p.1818
Main Authors: Lin, Li, Ou, Yiyu, Zhu, Xiaolong, Stamate, Eugen, Wu, Kaiyu, Liang, Meng, Liu, Zhiqiang, Yi, Xiaoyan, Herstrøm, Berit, Boisen, Anja, Jensen, Flemming, Ou, Haiyan
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Language:English
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Summary:We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.8.001818