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Processing and fabrication of micro-structures by multiphoton lithography in germanium-doped arsenic selenide

This work reports the processing and properties of a new chalcogenide glass film that can be photo-patterned by multiphoton lithography (MPL) with enhanced post-fabrication stability. Thermally evaporated germanium-doped arsenic selenide [Ge5(As2Se3)95] thin films were photo-patterned using the outp...

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Bibliographic Details
Published in:Optical materials express 2018-07, Vol.8 (7), p.1902
Main Authors: Schwarz, Casey M., Grabill, Chris N., Richardson, Gerald D., Labh, Sherya, Gleason, Benn, Rivero-Baleine, Clara, Richardson, Kathleen A., Pogrebnyakov, Alexej, Mayer, Theresa S., Kuebler, Stephen M.
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Language:English
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Summary:This work reports the processing and properties of a new chalcogenide glass film that can be photo-patterned by multiphoton lithography (MPL) with enhanced post-fabrication stability. Thermally evaporated germanium-doped arsenic selenide [Ge5(As2Se3)95] thin films were photo-patterned using the output of a mode-locked titanium:sapphire laser. The morphology, chemical structure, and optical properties of the material were studied before and after photo-patterning and compared for their long-term aging behavior and stability to previously investigated arsenic trisulfide (As2S3) films fabricated using similar MPL conditions. Relative to As2S3, thermally deposited Ge5(As2Se3)95 is found to offer higher photo-sensitivity and greater chemical stability after photo-patterning, as evidenced by lack of age-induced crystallization and reduced feature degradation over a four year aging period. These findings demonstrate the suitability of a new photo-patternable material for the creation of robust, long-lived functional infrared anti-reflective coatings and meta-optics.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.8.001902