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Processing and fabrication of micro-structures by multiphoton lithography in germanium-doped arsenic selenide
This work reports the processing and properties of a new chalcogenide glass film that can be photo-patterned by multiphoton lithography (MPL) with enhanced post-fabrication stability. Thermally evaporated germanium-doped arsenic selenide [Ge5(As2Se3)95] thin films were photo-patterned using the outp...
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Published in: | Optical materials express 2018-07, Vol.8 (7), p.1902 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This work reports the processing and properties of a new chalcogenide glass film that can be photo-patterned by multiphoton lithography (MPL) with enhanced post-fabrication stability. Thermally evaporated germanium-doped arsenic selenide [Ge5(As2Se3)95] thin films were photo-patterned using the output of a mode-locked titanium:sapphire laser. The morphology, chemical structure, and optical properties of the material were studied before and after photo-patterning and compared for their long-term aging behavior and stability to previously investigated arsenic trisulfide (As2S3) films fabricated using similar MPL conditions. Relative to As2S3, thermally deposited Ge5(As2Se3)95 is found to offer higher photo-sensitivity and greater chemical stability after photo-patterning, as evidenced by lack of age-induced crystallization and reduced feature degradation over a four year aging period. These findings demonstrate the suitability of a new photo-patternable material for the creation of robust, long-lived functional infrared anti-reflective coatings and meta-optics. |
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ISSN: | 2159-3930 2159-3930 |
DOI: | 10.1364/OME.8.001902 |