Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

Semi-polar (11-22) InGaN multiple quantum well (MQW) green light-emitting diode (LED) structures have been realized by metal-organic chemical vapor deposition on an m-plane sapphire substrate. By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significa...

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Bibliographic Details
Published in:Applied physics letters 2018-01, Vol.112 (5)
Main Authors: Zhao, Guijuan, Wang, Lianshan, Li, Huijie, Meng, Yulin, Li, Fangzheng, Yang, Shaoyan, Wang, Zhanguo
Format: Article
Language:English
Subjects:
Applied physics
Buffer layers
Current injection
Electroluminescence
Emission
Gallium nitrides
Indium gallium nitrides
Light emitting diodes
Metalorganic chemical vapor deposition
Optical properties
Organic chemicals
Organic chemistry
Photoluminescence
Quantum wells
Sapphire
Substrates
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Summary:Semi-polar (11-22) InGaN multiple quantum well (MQW) green light-emitting diode (LED) structures have been realized by metal-organic chemical vapor deposition on an m-plane sapphire substrate. By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significantly. The vertical alignment of the diffraction peaks in the (11-22) X-ray reciprocal space mapping indicates the fully strained MQW on the GaN layer. The photoluminescence spectra of the LED structure show stronger emission intensity along the [1-100] InGaN/GaN direction. The electroluminescence emission of the LED structure is very broad with peaks around 550 nm and 510 nm at the 100 mA current injection for samples A and B, respectively, and exhibits a significant blue-shift with increasing drive current.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4997319