A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see if pipe defects (emitter-collector shorts caused by locally e...

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Bibliographic Details
Published in:Journal of applied physics 2018-04, Vol.123 (16)
Main Authors: Yau, J.-B., Cai, J., Hashemi, P., Balakrishnan, K., D'Emic, C., Ning, T. H.
Format: Article
Language:English
Subjects:
Applied physics
Bipolar transistors
Defect annealing
Defects
Diodes
Dopants
Emitters
Ion implantation
Parallel connected
Pipes (defects)
Semiconductor devices
SOI (semiconductors)
Transistors
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Summary:We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see if pipe defects (emitter-collector shorts caused by locally enhanced dopant diffusion) are a show stopper for such bipolar technology. Measurements of IC -VCE and Gummel currents in parallel-connected transistor chains as a function of post-fabrication rapid thermal anneal cycles allow several process-related electrical defects to be identified. They include defective emitter-base and collector-base diodes, pipe defects, and defects associated with a dopant-deficient region in an extrinsic base adjacent its intrinsic base. There is no evidence of pipe defects being a major concern in SOI lateral bipolar transistors.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5001203