Self-assembled H-aggregation induced high performance poly (3-hexylthiophene) Schottky diode

The investigation of size confinement and chain orientation within the microstructure of a polymer thin film is very important for electronic device applications and fundamental research. Here, we present single step methodology for the synthesis of solution-processable poly (3-hexylthiophene) (P3HT...

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Bibliographic Details
Published in:Journal of applied physics 2017-12, Vol.122 (22)
Main Authors: Chaudhary, Vivek, Pandey, Rajiv K., Prakash, Rajiv, Singh, Arun Kumar
Format: Article
Language:English
Subjects:
Agglomeration
Applied physics
Atomic force microscopy
Charge transport
Excitation spectra
Indium tin oxides
Nanofibers
Photoluminescence
Polymer films
Polymers
Raman spectroscopy
Schottky diodes
Self-assembly
Spectrum analysis
Thin films
X-ray diffraction
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Summary:The investigation of size confinement and chain orientation within the microstructure of a polymer thin film is very important for electronic device applications and fundamental research. Here, we present single step methodology for the synthesis of solution-processable poly (3-hexylthiophene) (P3HT) nanofibers via a self-assembly process. The formation of P3HT nanofibers is confirmed by atomic force microscopy. The synthesized nanofibers are characterized by UV-visible absorption, photoluminescence, and Raman spectroscopy. The aggregation type of self-assembled P3HT is studied by both UV-visible absorbance and photoluminescence spectroscopy. The exciton bandwidth in polymer films is calculated by following the Spano's H-aggregate model and found to be 28 meV. Raman spectroscopy is used to identify the various stretching modes present in nanofibers. The structural investigation using grazing angle X-ray diffraction of nanofibers reveals the presence of alkyl chain ordering. We have fabricated organic Schottky diodes with P3HT nanofibers on indium tin oxide (ITO) coated glass with configuration Al/P3HT/ITO, and current density-voltage characteristics are subsequently used for extracting the electronic parameters of the device. We have also discussed the charge transport mechanism at the metal/polymer interface.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4997554