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A microwave field-driven transistor-like skyrmionic device with the microwave current-assisted skyrmion creation

Magnetic skyrmion is a topologically protected domain-wall structure at nanoscale, which could serve as a basic building block for advanced spintronic devices. Here, we propose a microwave field-driven skyrmionic device with the transistor-like function, where the motion of a skyrmion in a voltage-g...

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Bibliographic Details
Published in:Journal of applied physics 2017-10, Vol.122 (15)
Main Authors: Xia, Jing, Huang, Yangqi, Zhang, Xichao, Kang, Wang, Zheng, Chentian, Liu, Xiaoxi, Zhao, Weisheng, Zhou, Yan
Format: Article
Language:English
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Summary:Magnetic skyrmion is a topologically protected domain-wall structure at nanoscale, which could serve as a basic building block for advanced spintronic devices. Here, we propose a microwave field-driven skyrmionic device with the transistor-like function, where the motion of a skyrmion in a voltage-gated ferromagnetic nanotrack is studied by micromagnetic simulations. It is demonstrated that the microwave field can drive the motion of a skyrmion by exciting the propagating spin waves, and the skyrmion motion can be governed by a gate voltage. We also investigate the microwave current-assisted creation of a skyrmion to facilitate the operation of the transistor-like skyrmionic device on the source terminal. It is found that the microwave current with an appropriate frequency can reduce the threshold current density required for the creation of a skyrmion from the ferromagnetic background. The proposed transistor-like skyrmionic device operated with the microwave field and current could be useful for building future skyrmion-based circuits.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4999013