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A microwave field-driven transistor-like skyrmionic device with the microwave current-assisted skyrmion creation
Magnetic skyrmion is a topologically protected domain-wall structure at nanoscale, which could serve as a basic building block for advanced spintronic devices. Here, we propose a microwave field-driven skyrmionic device with the transistor-like function, where the motion of a skyrmion in a voltage-g...
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Published in: | Journal of applied physics 2017-10, Vol.122 (15) |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Magnetic skyrmion is a topologically protected domain-wall structure at nanoscale, which
could serve as a basic building block for advanced spintronic devices. Here, we propose a
microwave field-driven skyrmionic device with the transistor-like function, where the
motion of a skyrmion in a voltage-gated ferromagnetic nanotrack is studied by
micromagnetic simulations. It is demonstrated that the microwave field can drive the
motion of a skyrmion by exciting the propagating spin waves, and the skyrmion motion can
be governed by a gate voltage. We also investigate the microwave current-assisted creation
of a skyrmion to facilitate the operation of the transistor-like skyrmionic device on the
source terminal. It is found that the microwave current with an appropriate frequency can
reduce the threshold current density required for the creation of a skyrmion from the
ferromagnetic background. The proposed transistor-like skyrmionic device operated with the
microwave field and current could be useful for building future skyrmion-based
circuits. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4999013 |