Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces

Carbon nanotubes (CNTs) are emerging materials for semiconducting channels in high-performance thin-film transistor (TFT) technology. However, there are concerns regarding the contact resistance (Rcontact ) in CNT-TFTs, which limits the ultimate performance, especially the CNT-TFTs with the inkjet-p...

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Bibliographic Details
Published in:Applied physics letters 2017-10, Vol.111 (17)
Main Authors: Lee, Yongwoo, Yoon, Jinsu, Choi, Bongsik, Lee, Heesung, Park, Jinhee, Jeon, Minsu, Han, Jungmin, Lee, Jieun, Kim, Yeamin, Kim, Dae Hwan, Kim, Dong Myong, Choi, Sung-Jin
Format: Article
Language:English
Subjects:
Applied physics
Carbon nanotubes
Contact resistance
Density
Electrodes
Nanotubes
Performance measurement
Semiconductor devices
Thin film transistors
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Summary:Carbon nanotubes (CNTs) are emerging materials for semiconducting channels in high-performance thin-film transistor (TFT) technology. However, there are concerns regarding the contact resistance (Rcontact ) in CNT-TFTs, which limits the ultimate performance, especially the CNT-TFTs with the inkjet-printed source/drain (S/D) electrodes. Thus, the contact interfaces comprising the overlap between CNTs and metal S/D electrodes play a particularly dominant role in determining the performances and degree of variability in the CNT-TFTs with inkjet-printed S/D electrodes. In this work, the CNT-TFTs with improved device performance are demonstrated to enhance contact interfaces by controlling the CNT density at the network channel and underneath the inkjet-printed S/D electrodes during the formation of a CNT network channel. The origin of the improved device performance was systematically investigated by extracting Rcontact in the CNT-TFTs with the enhanced contact interfaces by depositing a high density of CNTs underneath the S/D electrodes, resulting in a 59% reduction in Rcontact ; hence, the key performance metrics were correspondingly improved without sacrificing any other device metrics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5009656