Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy

The electronic properties of SiGe on insulator (SGOI) structure are under intense investigation due to its importance as an electronic material. In the previous investigations, a p-type conduction was observed in SGOI even in the absence of extrinsic chemical acceptors, which is a serious problem fo...

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Bibliographic Details
Published in:Journal of applied physics 2018-04, Vol.123 (16)
Main Authors: Satoh, Motoki, Arimoto, Keisuke, Yamanaka, Junji, Sawano, Kentarou, Shiraki, Yasuhiro, Nakagawa, Kiyokazu
Format: Article
Language:English
Subjects:
Applied physics
Crystal defects
Defect annealing
Electrical properties
Electronic materials
Electronic properties
Heat treatment
Molecular beam epitaxy
Organic chemistry
Silicon germanides
Thin films
Valence band
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Summary:The electronic properties of SiGe on insulator (SGOI) structure are under intense investigation due to its importance as an electronic material. In the previous investigations, a p-type conduction was observed in SGOI even in the absence of extrinsic chemical acceptors, which is a serious problem for device applications. In this paper, the electrical properties of intrinsic-defect-related acceptor states generated during the SGOI formation are reported. It is found that freeze-out is hard to be achieved even at temperatures below 10 K, which indicates that the Fermi level lies near the valence band at low temperatures. With an aim to annihilate these defects, thermal annealing at 1050 °C for 12 h in N2 ambient was carried out. It was found that the thermal treatment is effective in reducing the densities of the acceptor states and in improving the crystalline quality.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5004077