Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contr...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2017-09, Vol.111 (13)
Main Authors: Tabataba-Vakili, Farsane, Roland, Iannis, Tran, Thi-Mo, Checoury, Xavier, El Kurdi, Moustafa, Sauvage, Sébastien, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
Format: Article
Language:English
Subjects:
Absorption
Applied physics
Condensed Matter
Holes
Nitrides
Other
Photonic crystals
Physics
Q factors
Quantum wells
Silicon substrates
Spectroellipsometry
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 2000 at 300 nm when no active layer is present.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4997124