Loading…
Domain structures of (Li,Na)NbO3 epitaxial films
The domain structures of (LixNa1-x)NbO3 (x = 0, 0.05, 0.10, and 0.13) epitaxial films on SrRuO3/(001) SrTiO3 substrates were studied by laser scanning microscopy and reciprocal space mapping. The stripe domains with in-plane antiferroelectric polarization of an orthorhombic P phase were observed at...
Saved in:
Published in: | Journal of applied physics 2017-07, Vol.122 (4) |
---|---|
Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | The domain structures of (LixNa1-x)NbO3 (x = 0, 0.05, 0.10, and 0.13) epitaxial films on SrRuO3/(001) SrTiO3 substrates were studied by laser scanning microscopy and reciprocal space mapping. The stripe domains with in-plane antiferroelectric polarization of an orthorhombic P phase were observed at x = 0. At x = 0.05 and 0.10, the crystal phase was changed to an orthorhombic Q phase and the domain structure was changed to a mixture of stripe domains with in-plane ferroelectric polarization and thick line-like domains with out-of-plane ferroelectric polarization. At x = 0.13, the line-like domain pattern was altered to a leaf-like domain pattern and out-of-plane ferroelectric polarization of a rhombohedral N phase was induced in the stripe domains. After an electric field was applied along an out-of-plane direction, some of the stripe domains with the in-plane polarization of the P phase at x = 0 and those with the in-plane polarization of the Q phase at x = 0.05 were switched to domains with out-of-plane polarization of the Q phase. On the other hand, stripe domains with out-of-plane ferroelectric polarization of the N phase were formed in the line-like and stripe domains of the Q phase at x = 0.10. At x = 0.13, most domains changed to stripe domains of the N phase. The relationship between the domains and the remanent polarization was discussed. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4996351 |