Lasing in cuprous iodide microwires

We report on the observation of lasing in cuprous iodide (CuI) microwires. A vapor-phase transport growth procedure was used to synthesize CuI microwires with low defect concentration. The crystal structure of single microwires was determined to be of zincblende-type. The high optical quality of sin...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2017-07, Vol.111 (3)
Main Authors: Wille, Marcel, Krüger, Evgeny, Blaurock, Steffen, Zviagin, Vitaly, Deichsel, Rafael, Benndorf, Gabriele, Trefflich, Lukas, Gottschalch, Volker, Krautscheid, Harald, Schmidt-Grund, Rüdiger, Grundmann, Marius
Format: Article
Language:English
Subjects:
Applied physics
Cryogenic temperature
Crystal defects
Crystal structure
Cuprous iodide
Excitation
Lasing
Photoluminescence
Zincblende
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report on the observation of lasing in cuprous iodide (CuI) microwires. A vapor-phase transport growth procedure was used to synthesize CuI microwires with low defect concentration. The crystal structure of single microwires was determined to be of zincblende-type. The high optical quality of single microwires is indicated by the observed series of excitonic emission lines as well as by the formation of gain under optical excitation. Lasing of triangular whispering-gallery modes in single microwires is demonstrated for fs- and ns-excitation from cryogenic temperatures up to 200 K. Time-resolved micro-photoluminescence studies reveal the dynamics of the laser process on the time scale of several picoseconds.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4990524