BaTiO3/SrTiO3 heterostructures for ferroelectric fieldeffect transistors

Integration of ultrathin ferroelectric thin films with semiconductors is of interest fornegative capacitancetransistors thatexhibit internal voltage gain, which may allow for scaling the supply voltage of low powercircuits. In this study, BaTiO3 thin films were grown on doped SrTiO3channels using mo...

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Bibliographic Details
Published in:Applied physics letters 2017-06, Vol.110 (23)
Main Authors: Shoron, Omor F, Raghavan Santosh, Freeze, Christopher R, Stemmer, Susanne
Format: Article
Language:English
Subjects:
Applied physics
Barium titanates
Electric potential
Epitaxial growth
Ferroelectric materials
Ferroelectricity
Field effect transistors
Heterostructures
Hysteresis
Molecular beam epitaxy
Parallel plates
Semiconductor devices
Strontium titanates
Thin films
Transistors
Voltage gain
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Summary:Integration of ultrathin ferroelectric thin films with semiconductors is of interest fornegative capacitancetransistors thatexhibit internal voltage gain, which may allow for scaling the supply voltage of low powercircuits. In this study, BaTiO3 thin films were grown on doped SrTiO3channels using molecular beam epitaxy. The BaTiO3films areferroelectricdespite their low thickness (∼10 nm). Parallel plate capacitor devices exhibitanti-clockwise hysteresis, and a comparison with reference structures withoutBaTiO3 shows that the polarization in the BaTiO3 thinfilms isswitchable and controls the chargedensity in the channel. Field effect transistors were fabricated to study theeffect of ferroelectricity on the transistor characteristics. Anti-clockwise hysteresis and a shift inthreshold-voltage are observed in the output characteristics of the transistors. These propertiesmake these heterostructures a suitable system for studying negative capacitance effects.
ISSN:0003-6951
1077-3118