Fabrication of nylon/fullerene polymer memory

Two terminal Organic memories in passive matrix array form with device structure, Al/Nylon/ (Nylon+C60)/Nylon/ Al are fabricated. The current-voltage measurements showed hysteresis and the devices are thoroughly characterized for write-read-erase-read cycles. The control over the dispersion concentr...

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Main Authors: Jayan, Manuvel, Davis, Rosemary, Karthik, M. P., Devika, K., Kumar, G. Vijay, Sriraj, B., Predeep, P.
Format: Conference Proceeding
Language:English
Subjects:
Buckminsterfullerene
Electrical measurement
Electron micrographs
Fullerenes
Micrometers
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Davis, Rosemary
Karthik, M. P.
Devika, K.
Kumar, G. Vijay
Sriraj, B.
Predeep, P.
description Two terminal Organic memories in passive matrix array form with device structure, Al/Nylon/ (Nylon+C60)/Nylon/ Al are fabricated. The current-voltage measurements showed hysteresis and the devices are thoroughly characterized for write-read-erase-read cycles. The control over the dispersion concentration, capacity of fullerene to readily accept electrons and the constant diameter of fullerene made possible uniform device fabrication with reproducible results. Scanning electron micrographs indicated that the device thickness remained uniform in the range of 19 micrometers.
doi_str_mv 10.1063/1.4984198
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Buckminsterfullerene
Electrical measurement
Electron micrographs
Fullerenes
Micrometers
title Fabrication of nylon/fullerene polymer memory
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