Temperature dependent photoreflectance study of Cu2SnS3 thin films produced by pulsed laser deposition

The energy band structure of Cu2SnS3 (CTS) thin films fabricated by pulsed laser deposition was studied by photoreflectance spectroscopy (PR). The temperature-dependent PR spectra were measured in the range of T = 10–150 K. According to the Raman scattering analysis, the monoclinic crystal structure...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2017-06, Vol.110 (26)
Main Authors: Raadik, T., Grossberg, M., Krustok, J., Kauk-Kuusik, M., Crovetto, A., Bolt Ettlinger, R., Hansen, O., Schou, J.
Format: Article
Language:English
Subjects:
Applied physics
Copper sulfides
Crystal structure
Optical transition
Pulsed laser deposition
Pulsed lasers
Raman spectra
Rangefinding
Spectrum analysis
Temperature dependence
Thin films
Valence band
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The energy band structure of Cu2SnS3 (CTS) thin films fabricated by pulsed laser deposition was studied by photoreflectance spectroscopy (PR). The temperature-dependent PR spectra were measured in the range of T = 10–150 K. According to the Raman scattering analysis, the monoclinic crystal structure (C1c1) prevails in the studied CTS thin film; however, a weak contribution from cubic CTS (F-43m) was also detected. The PR spectra revealed the valence band splitting of CTS. Optical transitions at EA  = 0.92 eV, EB = 1.04 eV, and EC  = 1.08 eV were found for monoclinic CTS at low-temperature (T = 10 K). Additional optical transition was detected at E A C  = 0.94 eV, and it was attributed to the low-temperature band gap of cubic CTS. All the identified optical transition energies showed a blueshift with increasing temperature, and the temperature coefficient dE/dT was about 0.1 meV/K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4990657