Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering

We report dual ion beam sputtering fabrication of an Al/ZnO/Al memristor displaying forming-free bipolar resistive switching characteristics with memristive behavior without necessitating any post-processing steps. A nearly amorphous ZnO thin film and an appropriate concentration of oxygen vacancies...

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Bibliographic Details
Published in:Applied physics letters 2017-06, Vol.110 (25)
Main Authors: Kumar, Amitesh, Das, Mangal, Garg, Vivek, Sengar, Brajendra S., Htay, Myo Than, Kumar, Shailendra, Kranti, Abhinav, Mukherjee, Shaibal
Format: Article
Language:English
Subjects:
Applied physics
Computer memory
Endurance
Ion beam sputtering
Ion beams
Lattice vacancies
Memory devices
Memristors
Oxygen ions
Post-production processing
Switching
Thin films
Zinc oxide
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Summary:We report dual ion beam sputtering fabrication of an Al/ZnO/Al memristor displaying forming-free bipolar resistive switching characteristics with memristive behavior without necessitating any post-processing steps. A nearly amorphous ZnO thin film and an appropriate concentration of oxygen vacancies play a significant role in imparting forming-free, stable, and reliable behavior to memory cells. Besides, sufficient non-lattice oxygen ions in the film play a crucial role in the resistive switching process. The AlOx interface layer is observed to strongly affect the switching mechanism in the memory device by altering the barrier at the Al/ZnO interface. The device shows stable switching behavior for >250 cycles with good retention and stable set/reset voltages.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4989802