Solution-Processed Rb-Doped Indium Zinc Oxide Thin-Film Transistors

Rubidium-doped indium zinc oxide thin film transistors (TFTs), including zirconium oxide gate dielectrics and In-Zn-O (IZO) channel deposition, were fabricated using a solution process. Electrical characteristics of Rb-doped IZO TFTs were improved significantly because of crystallinity enhancement w...

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Bibliographic Details
Published in:IEEE electron device letters 2018-09, Vol.39 (9), p.1330-1333
Main Authors: Kim, Sang-Woo, Nguyen, Manh-Cuong, Nguyen, An Hoang-Thuy, Choi, Su-Jin, Ji, Hyung-Min, Cheon, Jong-Gyu, Yu, Kyoung-Moon, Kim, Jin-Hyun, Cho, Seong-Yong, Choi, Rino
Format: Article
Language:English
Subjects:
Doping
II-VI semiconductor materials
In-Zn-O
Indium
Ions
Rubidium
Semiconductor devices
Solution process
Thermal stability
Thin film transistors
Threshold voltage
Transistors
Zinc oxide
Zinc oxides
Zirconium oxides
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Summary:Rubidium-doped indium zinc oxide thin film transistors (TFTs), including zirconium oxide gate dielectrics and In-Zn-O (IZO) channel deposition, were fabricated using a solution process. Electrical characteristics of Rb-doped IZO TFTs were improved significantly because of crystallinity enhancement with Rb doping. The optimal Rb-doping concentration to reach the highest field-effect mobility, ON/OFF current ratio, and a subthreshold slope were obtained at an Rb-doping concentration of 2 moles%. Compared with Li doping, Rb-doped IZO transistors exhibited less change of threshold voltage under bias stress.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2862418