Toward GHz Switching in SOI Light Emitting Diodes

In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our finding...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2018-10, Vol.65 (10), p.4413-4420
Main Authors: Puliyankot, Vidhu, Piccolo, Giulia, Hueting, Raymond J. E., Schmitz, Jurriaan
Format: Article
Language:English
Subjects:
Dependence
Design optimization
Emissions control
Light emission
Light emitting diodes
Light-emitting diodes (LEDs)
modeling
On-Off Keying
Optical switches
Organic light emitting diodes
P-i-n diodes
Photonics
quantum efficiency
Silicon
silicon photonics
Silicon-on-insulator
simulation
SOI (semiconductors)
Switching
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Summary:In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that ON-OFF keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2866517