Modeling of Electron Devices Based on 2-D Materials

• Published in: IEEE transactions on electron devices 2018-10, Vol.65 (10), p.4167-4179
• Main Authors: Marin, E. G., Perucchini, M., Marian, D., Iannaccone, G., Fiori, G.
• Format: Article
• Language: English
• Subjects: 2-D materials; <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">k · <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">p; compact models; Computational modeling; Computer simulation; conditional wave function (CWF); density functional theory (DFT); Devices; Discrete Fourier transforms; drift-diffusion (DD); Electron devices; Electron transport; Graphene; Heterostructures; Mathematical model; modeling; Monte Carlo (MC); multiscale; nonequilibrium Green functions (NEGFs); Photonic band gap; simulation; State-of-the-art reviews; tight binding (TB); Two dimensional analysis; Two dimensional displays; Two dimensional models; Wannier functions
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2018.2854902

The advent of graphene and related 2-D materials has attracted the interest of the electron device research community in the past 14 years. The possibility to boost the transistor performance and the prospects to build novel device concepts with 2-D materials and their heterostructures has awakened a strong experimental interest that requires continuous support from modeling. In this paper, we review the state of the art in the simulation of electron devices based on 2-D materials. We outline the main methods to model the electronic bandstructure and to study electron transport, classifying them in terms of accuracy and computational cost. We briefly discuss, how they can be combined in a multiscale approach to provide a quantitative understanding of the mechanisms determining the operation of electron devices, and we examine the application of these methods to different families of 2-D materials. Finally, we shortly analyze the main open challenges of modeling 2-D-based electron devices.