Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor

We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidt...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2015-07, Vol.107 (4)
Main Authors: Alloatti, L., Srinivasan, S. A., Orcutt, J. S., Ram, R. J.
Format: Article
Language:English
Subjects:
Applied physics
Bias
Change detection
CMOS
Dark current
Metal oxide semiconductors
Photometers
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidth are of 0.023 A/W at a wavelength of 1180 nm and 32 GHz at −1 V bias (18 GHz at 0 V bias). The dark current is less than 10 pA and the dynamic range is larger than 60 dB.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4927393