Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

• Published in: Journal of applied physics 2016-12, Vol.120 (23)
• Main Authors: Deen, David A., Miller, Ross A., Osinsky, Andrei V., Downey, Brian P., Storm, David F., Meyer, David J., Scott Katzer, D., Nepal, Neeraj
• Format: Article
• Language: English
• Subjects: Aluminum nitride; Computer simulation; Electron gas; Electrons; Electrostatics; Epitaxial growth; Gallium nitrides; High electron mobility transistors; Modelling; Performance measurement; Semiconductor devices; Substrates; Three dimensional models; Transistors; Trapped charge; Variation
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.4972225

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of the same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.