Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition

Precise control of dopant composition is critical for the production of semiconductor films with desired properties. Here, we present results on the electrical properties for Si doped Ga2O3 films grown by pulsed laser deposition technique (PLD). The Si composition in the films can be controlled by c...

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Bibliographic Details
Published in:Applied physics letters 2016-09, Vol.109 (10)
Main Authors: Zhang, Fabi, Arita, Makoto, Wang, Xu, Chen, Zhengwei, Saito, Katsuhiko, Tanaka, Tooru, Nishio, Mitsuhiro, Motooka, Teruaki, Guo, Qixin
Format: Article
Language:English
Subjects:
Applied physics
Carrier density
Composition
Electrical properties
Electrical resistivity
Electronic devices
Gallium oxides
Pulsed laser deposition
Pulsed lasers
Secondary ion mass spectroscopy
Silicon
Stability
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Summary:Precise control of dopant composition is critical for the production of semiconductor films with desired properties. Here, we present results on the electrical properties for Si doped Ga2O3 films grown by pulsed laser deposition technique (PLD). The Si composition in the films can be controlled by changing the target composition as observed from the secondary ion mass spectroscopy measurement. The carrier density of the films is varied from the order of 1015 to 1020 cm−3 while the conductivity from 10−4 to 1 S cm−1 as measured by Hall equipment. The carrier density of the films has been verified by Kelvin force microscopy, which shows an increased surface work function with the increase of carrier density. The results suggest that the carrier density of β-Ga2O3 films is controllable by Si doping by PLD, paving a way to develop the Ga2O3 film-based electronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4962463