Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu2O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device a...

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Bibliographic Details
Published in:Applied physics letters 2016-09, Vol.109 (10)
Main Authors: Kim, Hong-Sik, Patel, Malkeshkumar, Yadav, Pankaj, Kim, Joondong, Sohn, Ahrum, Kim, Dong-Wook
Format: Article
Language:English
Subjects:
Applied physics
ATOMIC FORCE MICROSCOPY
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER OXIDES
ELECTRICAL PROPERTIES
ELECTRON SCANNING
HETEROJUNCTIONS
LAYERS
Metal oxides
Microscopy
Optical properties
PHOTODETECTORS
Photoelectricity
Photometers
SCANNING ELECTRON MICROSCOPY
SPECTROMETERS
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
X-RAY DIFFRACTION
Zinc oxide
ZINC OXIDES
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Summary:Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu2O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu2O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4961692