Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance ( Δ C ) with different pulse height, the gate pulse induced trap behaviours in SiNX gate dielectri...

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Bibliographic Details
Published in:AIP advances 2016-09, Vol.6 (9), p.095021-095021-7
Main Authors: Dong, Bin, Lin, Jie, Wang, Ning, Jiang, Ling-li, Liu, Zong-dai, Hu, Xiaoyan, Cheng, Kai, Yu, Hong-yu
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Capacitance
Electron traps
High electron mobility transistors
Pulse amplitude
Room temperature
Semiconductor devices
Stability
Threshold voltage
Transistors
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Summary:In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance ( Δ C ) with different pulse height, the gate pulse induced trap behaviours in SiNX gate dielectric layer or at the SiNX/AlGaN interface is revealed. Based on the results, a model on electron traps in AlGaN/GaN HEMTs is proposed. The threshold voltage (Vth) instability in AlGaN/GaN HEMTs is believed to be correlated with the presence of these traps in SiNX gate dielectric layer or at the SiNX/AlGaN interface. Furthermore, trap density before and after step-stress applied on drain electrode is quantitatively analyzed based on Δ C measurement.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4963740