Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

MoSe2-doped ultralong Se microwires of length/diameter ratio in the order of ∼240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe2-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of ∼102 for 5000 s...

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Bibliographic Details
Published in:Applied physics letters 2016-10, Vol.109 (14)
Main Authors: Zhou, Guangdong, Sun, Bai, Yao, Yanqing, Zhang, Huihui, Zhou, Ankun, Alameh, Kamal, Ding, Baofu, Song, Qunliang
Format: Article
Language:English
Subjects:
Applied physics
Immunity
Migration
Switching
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Summary:MoSe2-doped ultralong Se microwires of length/diameter ratio in the order of ∼240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe2-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of ∼102 for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4962655