Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1−xZrxO2/Al2O3 thin film stacks

Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1−xZrxO2 (0 ≤ x ≤ 1) thin films (

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Bibliographic Details
Published in:Journal of applied physics 2016-09, Vol.120 (12)
Main Authors: Dey, Sonal, Tapily, Kandabara, Consiglio, Steven, Clark, Robert D., Wajda, Cory S., Leusink, Gert J., Woll, Arthur R., Diebold, Alain C.
Format: Article
Language:English
Subjects:
Aluminum oxide
Annealing
Applied physics
Atomic layer epitaxy
Crystallization
Dielectrics
Diffusion barriers
Diffusion layers
Field effect transistors
Germanates
Germanium
Hafnium oxide
Interfacial properties
MOSFETs
Phase transitions
Semiconductor devices
Silicon substrates
Thickness
Thin films
X ray photoelectron spectroscopy
Zirconium dioxide
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Description
Summary:Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1−xZrxO2 (0 ≤ x ≤ 1) thin films (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4963166