Low temperature conduction-band transport in diamond

By performing Time-of-Flight measurements on high-purity single-crystalline chemical vapor deposited diamond, we are able to extract the electron drift velocity of valley-polarized electrons in the low-injection regime. The aim of this study is to improve the understanding of the mechanisms involved...

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Bibliographic Details
Published in:Applied physics letters 2016-10, Vol.109 (16)
Main Authors: Majdi, S., Gabrysch, M., Kovi, K. K., Suntornwipat, N., Friel, I., Isberg, J.
Format: Article
Language:English
Subjects:
Applied physics
Charge simulation
Charge transport
Chemical vapor deposition
Computer simulation
Conduction bands
Conduction cooling
Diamonds
Electron drift velocity
Electron mobility
Electrons
Inelastic scattering
Low temperature
Organic chemistry
Single crystals
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Summary:By performing Time-of-Flight measurements on high-purity single-crystalline chemical vapor deposited diamond, we are able to extract the electron drift velocity of valley-polarized electrons in the low-injection regime. The aim of this study is to improve the understanding of the mechanisms involved in the conduction-band transport of valley-polarized electrons. The measurements were carried out within the temperature range of 10–80 K, and the experimental results are systematically compared with Monte Carlo charge transport simulations. We observe a rapid enhancement of the electron mobility with decreasing temperature, which reveals that inelastic effects in electron-phonon scattering become important below ∼40 K. In addition, we obtain the momentum relaxation rate for electrons with different valley polarizations.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.4964720