Electric field and temperature effects in irradiated MOSFETs

Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specific to a particular technology, it is of extreme im...

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Bibliographic Details
Main Authors: Silveira, M. A. G., Santos, R. B. B., Leite, F. G., Araújo, N. E., Cirne, K. H., Melo, M. A. A., Rallo, A., Aguiar, Vitor. A. P., Aguirre, F., Macchione, E. L. A., Added, N., Medina, N. H.
Format: Conference Proceeding
Language:English
Subjects:
ANNEALING
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC FIELDS
Electronic devices
ELECTRONIC EQUIPMENT
Field effect transistors
Ionizing radiation
IONIZING RADIATIONS
IRRADIATION
Metal oxide semiconductors
METALS
MOSFET
MOSFETs
OXIDES
PHYSICAL RADIATION EFFECTS
Radiation damage
Semiconductor devices
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
Temperature effects
Test procedures
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Summary:Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specific to a particular technology, it is of extreme importance to develop methods for testing and recovering the devices. The aim of this work is to check the influence of thermal annealing processes and electric field applied during irradiation of Metal Oxide Semiconductor Field Effect Transistors (MOSFET) in total ionizing dose experiments analyzing the changes in the electrical parameters in these devices
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4955374