Comparative efficiency analysis of GaN-based light-emitting diodes and laser diodes

Nobel laureate Shuji Nakamura predicted in 2014 that GaN-based laser diodes are the future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% wall-plug efficiency, while some GaN-based blue light-emitting diodes exceed 80%. This paper investigates non-thermal reasons behin...

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Published in:Applied physics letters 2016-07, Vol.109 (2)
Main Author: Piprek, Joachim
Format: Article
Language:English
Subjects:
Applied physics
Efficiency
Electrical resistivity
Energy conversion efficiency
Gallium nitrides
Hole conductivity
Laser beam cladding
Lasers
Light emitting diodes
Magnesium
Organic light emitting diodes
Semiconductor lasers
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description Nobel laureate Shuji Nakamura predicted in 2014 that GaN-based laser diodes are the future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% wall-plug efficiency, while some GaN-based blue light-emitting diodes exceed 80%. This paper investigates non-thermal reasons behind this difference. The inherently poor hole conductivity of the Mg-doped waveguide cladding layer of laser diodes is identified as main reason for their low electrical-to-optical energy conversion efficiency.
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP - American Institute of Physics
subjects Applied physics
Efficiency
Electrical resistivity
Energy conversion efficiency
Gallium nitrides
Hole conductivity
Laser beam cladding
Lasers
Light emitting diodes
Magnesium
Organic light emitting diodes
Semiconductor lasers
title Comparative efficiency analysis of GaN-based light-emitting diodes and laser diodes
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