Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers

Optical and electrical properties of nBn photodetectors using InAs/AlAs/AlSb/AlAs/InAs/InAs0.61Sb0.39W-structure superlattice (W-SL) absorbers are reported. Minority carrier lifetimes of 500 ± 50 ns and 400 ± 30 ns, and Auger coefficients of 2.1 × 10−26 cm6/s and 1.6 × 10−25 cm6/s, for samples with...

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Published in:Applied physics letters 2016-06, Vol.108 (25)
Main Authors: Olson, B. V., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Coon, W. T., Fortune, T. R., Tauke-Pedretti, A., Cavaliere, M. A., Shaner, E. A.
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Language:English
Subjects:
Applied physics
Augers
Barrier layers
Carrier lifetime
Dark current
Electrical properties
Energy gap
Intermetallic compounds
Minority carriers
Optical properties
Superlattices
Valence band
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cited_by cdi_FETCH-LOGICAL-c389t-1880e63e400eba997edaa280a456ff343cc4d4fef57d245df87b99980caf04723
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container_issue 25
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container_title Applied physics letters
container_volume 108
creator Olson, B. V.
Kim, J. K.
Kadlec, E. A.
Klem, J. F.
Hawkins, S. D.
Coon, W. T.
Fortune, T. R.
Tauke-Pedretti, A.
Cavaliere, M. A.
Shaner, E. A.
description Optical and electrical properties of nBn photodetectors using InAs/AlAs/AlSb/AlAs/InAs/InAs0.61Sb0.39W-structure superlattice (W-SL) absorbers are reported. Minority carrier lifetimes of 500 ± 50 ns and 400 ± 30 ns, and Auger coefficients of 2.1 × 10−26 cm6/s and 1.6 × 10−25 cm6/s, for samples with bandgap energies of 5.3 μm (W-SL A) and 7.5 μm (W-SL B) are reported at 100 K, respectively. Shockley–Read–Hall defect states are identified at 65 meV and 45 meV above the W-SL valence band edges for W-SLs A and B, respectively. Dark currents are also reported and compared with diffusion currents calculated using the carrier lifetime data, suggesting low vertical heavy hole diffusivity.
doi_str_mv 10.1063/1.4954649
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V. ; Kim, J. K. ; Kadlec, E. A. ; Klem, J. F. ; Hawkins, S. D. ; Coon, W. T. ; Fortune, T. R. ; Tauke-Pedretti, A. ; Cavaliere, M. A. ; Shaner, E. A.</creator><creatorcontrib>Olson, B. V. ; Kim, J. K. ; Kadlec, E. A. ; Klem, J. F. ; Hawkins, S. D. ; Coon, W. T. ; Fortune, T. R. ; Tauke-Pedretti, A. ; Cavaliere, M. A. ; Shaner, E. A.</creatorcontrib><description>Optical and electrical properties of nBn photodetectors using InAs/AlAs/AlSb/AlAs/InAs/InAs0.61Sb0.39W-structure superlattice (W-SL) absorbers are reported. Minority carrier lifetimes of 500 ± 50 ns and 400 ± 30 ns, and Auger coefficients of 2.1 × 10−26 cm6/s and 1.6 × 10−25 cm6/s, for samples with bandgap energies of 5.3 μm (W-SL A) and 7.5 μm (W-SL B) are reported at 100 K, respectively. Shockley–Read–Hall defect states are identified at 65 meV and 45 meV above the W-SL valence band edges for W-SLs A and B, respectively. 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source American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Applied physics
Augers
Barrier layers
Carrier lifetime
Dark current
Electrical properties
Energy gap
Intermetallic compounds
Minority carriers
Optical properties
Superlattices
Valence band
title Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers
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