Structure and chemistry of passivated SiC/SiO2 interfaces

Here, we report on the chemistry and structure of 4H-SiC/SiO2 interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO2 interface after processing....

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Bibliographic Details
Published in:Applied physics letters 2016-05, Vol.108 (20)
Main Authors: Houston Dycus, J., Xu, Weizong, Lichtenwalner, Daniel J., Hull, Brett, Palmour, John W., LeBeau, James M.
Format: Article
Language:English
Subjects:
Annealing
Applied physics
Atomic structure
Nitric oxide
Organic chemistry
Scanning electron microscopy
Scanning transmission electron microscopy
Silicon dioxide
Transmission electron microscopy
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Summary:Here, we report on the chemistry and structure of 4H-SiC/SiO2 interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO2 interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4951677