Doping mechanism in pure CuInSe2

We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe2 thin films for different copper-to-indium ratios and selenium excess during growth. We find that all copper-poor samples are n-type, and that hopping conduction in a shallow donor state plays a significant rol...

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Bibliographic Details
Published in:Journal of applied physics 2016-05, Vol.119 (17)
Main Authors: Werner, F., Colombara, D., Melchiorre, M., Valle, N., El Adib, B., Spindler, C., Siebentritt, S.
Format: Article
Language:English
Subjects:
Applied physics
Carrier density
Carrier mobility
Carrier transport
Copper
Copper indium selenides
Doping
Gallium
Hopping conduction
Majority carriers
Photovoltaic cells
Selenium
Solar cells
Substrates
Thin films
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Summary:We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe2 thin films for different copper-to-indium ratios and selenium excess during growth. We find that all copper-poor samples are n-type, and that hopping conduction in a shallow donor state plays a significant role for carrier transport. Annealing in sodium ambient enhances gallium in-diffusion from the substrate wafer and changes the net doping of the previously n-type samples to p-type. We suggest that sodium incorporation from the glass might be responsible for the observed p-type doping in polycrystalline Cu-poor CuInSe2 solar cell absorbers.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4947585