Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation te...

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Bibliographic Details
Published in:Journal of applied physics 2016-04, Vol.119 (15)
Main Authors: Ozcan, Ahmet S., Lavoie, Christian, Alptekin, Emre, Jordan-Sweet, Jean, Zhu, Frank, Leith, Allen, Pfeifer, Brian D., LaRose, J. D., Russell, N. M.
Format: Article
Language:English
Subjects:
Applied physics
C-MOS
Clusters
Depth profiling techniques
Epitaxial growth
Epitaxy
Intermetallic compounds
Ion beams
Ion implantation
Materials modification
Nickel compounds
Nickel silicide
PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Platinum compounds
Scanning electron microscopy
Semiconductor device fabrication
Silicide
Silicon germanides
Solid solid interfaces
X-ray diffraction
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Summary:We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4947054