Loading…
Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe
We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation te...
Saved in:
| Published in: | Journal of applied physics 2016-04, Vol.119 (15) |
|---|---|
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c389t-89c1ebb946cd37e46b37328ec4ad871742cfc0b19e0c1d741f259e8af3fc44c3 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c389t-89c1ebb946cd37e46b37328ec4ad871742cfc0b19e0c1d741f259e8af3fc44c3 |
| container_end_page | |
| container_issue | 15 |
| container_start_page | |
| container_title | Journal of applied physics |
| container_volume | 119 |
| creator | Ozcan, Ahmet S. Lavoie, Christian Alptekin, Emre Jordan-Sweet, Jean Zhu, Frank Leith, Allen Pfeifer, Brian D. LaRose, J. D. Russell, N. M. |
| description | We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces. |
| doi_str_mv | 10.1063/1.4947054 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_journals_2121817823</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2121817823</sourcerecordid><originalsourceid>FETCH-LOGICAL-c389t-89c1ebb946cd37e46b37328ec4ad871742cfc0b19e0c1d741f259e8af3fc44c3</originalsourceid><addsrcrecordid>eNqd0M1KAzEQAOAgCtbqwTdY9KSwNbPJNslRSq1CUcHew-5sointpiap4Nub2oJ3YWBg-Jg_Qi6BjoCO2R2MuOKC1vyIDIBKVYq6psdkQGkFpVRCnZKzGJeUAkimBmQ6a2KBq21MJhTO90VrmnXRxOhypSue3Wsq3k1YN70vo1s5dJ0prM-FtNM53tzMnJMT26yiuTjkIVk8TBeTx3L-Mnua3M9LZFKlPB_BtK3iY-yYMHzcMsEqaZA3nRQgeIUWaQvKUIROcLBVrYxsLLPIObIhudq39TE5HdElgx_o-95g0sBqzoTI6HqPNsF_bk1Meum3oc9r6QoqkCBkxbK62SsMPsZgrN4Et27Ctwaqd5_UoA-fzPZ2b3cTf-_-H_7y4Q_qTWfZD4dBgEo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2121817823</pqid></control><display><type>article</type><title>Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Ozcan, Ahmet S. ; Lavoie, Christian ; Alptekin, Emre ; Jordan-Sweet, Jean ; Zhu, Frank ; Leith, Allen ; Pfeifer, Brian D. ; LaRose, J. D. ; Russell, N. M.</creator><creatorcontrib>Ozcan, Ahmet S. ; Lavoie, Christian ; Alptekin, Emre ; Jordan-Sweet, Jean ; Zhu, Frank ; Leith, Allen ; Pfeifer, Brian D. ; LaRose, J. D. ; Russell, N. M. ; Brookhaven National Lab. (BNL), Upton, NY (United States)</creatorcontrib><description>We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4947054</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; C-MOS ; Clusters ; Depth profiling techniques ; Epitaxial growth ; Epitaxy ; Intermetallic compounds ; Ion beams ; Ion implantation ; Materials modification ; Nickel compounds ; Nickel silicide ; PHYSICS OF ELEMENTARY PARTICLES AND FIELDS ; Platinum compounds ; Scanning electron microscopy ; Semiconductor device fabrication ; Silicide ; Silicon germanides ; Solid solid interfaces ; X-ray diffraction</subject><ispartof>Journal of applied physics, 2016-04, Vol.119 (15)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-89c1ebb946cd37e46b37328ec4ad871742cfc0b19e0c1d741f259e8af3fc44c3</citedby><cites>FETCH-LOGICAL-c389t-89c1ebb946cd37e46b37328ec4ad871742cfc0b19e0c1d741f259e8af3fc44c3</cites><orcidid>0000-0001-6815-6915 ; 0000000168156915</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1354377$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ozcan, Ahmet S.</creatorcontrib><creatorcontrib>Lavoie, Christian</creatorcontrib><creatorcontrib>Alptekin, Emre</creatorcontrib><creatorcontrib>Jordan-Sweet, Jean</creatorcontrib><creatorcontrib>Zhu, Frank</creatorcontrib><creatorcontrib>Leith, Allen</creatorcontrib><creatorcontrib>Pfeifer, Brian D.</creatorcontrib><creatorcontrib>LaRose, J. D.</creatorcontrib><creatorcontrib>Russell, N. M.</creatorcontrib><creatorcontrib>Brookhaven National Lab. (BNL), Upton, NY (United States)</creatorcontrib><title>Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe</title><title>Journal of applied physics</title><description>We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.</description><subject>Applied physics</subject><subject>C-MOS</subject><subject>Clusters</subject><subject>Depth profiling techniques</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>Intermetallic compounds</subject><subject>Ion beams</subject><subject>Ion implantation</subject><subject>Materials modification</subject><subject>Nickel compounds</subject><subject>Nickel silicide</subject><subject>PHYSICS OF ELEMENTARY PARTICLES AND FIELDS</subject><subject>Platinum compounds</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor device fabrication</subject><subject>Silicide</subject><subject>Silicon germanides</subject><subject>Solid solid interfaces</subject><subject>X-ray diffraction</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqd0M1KAzEQAOAgCtbqwTdY9KSwNbPJNslRSq1CUcHew-5sointpiap4Nub2oJ3YWBg-Jg_Qi6BjoCO2R2MuOKC1vyIDIBKVYq6psdkQGkFpVRCnZKzGJeUAkimBmQ6a2KBq21MJhTO90VrmnXRxOhypSue3Wsq3k1YN70vo1s5dJ0prM-FtNM53tzMnJMT26yiuTjkIVk8TBeTx3L-Mnua3M9LZFKlPB_BtK3iY-yYMHzcMsEqaZA3nRQgeIUWaQvKUIROcLBVrYxsLLPIObIhudq39TE5HdElgx_o-95g0sBqzoTI6HqPNsF_bk1Meum3oc9r6QoqkCBkxbK62SsMPsZgrN4Et27Ctwaqd5_UoA-fzPZ2b3cTf-_-H_7y4Q_qTWfZD4dBgEo</recordid><startdate>20160421</startdate><enddate>20160421</enddate><creator>Ozcan, Ahmet S.</creator><creator>Lavoie, Christian</creator><creator>Alptekin, Emre</creator><creator>Jordan-Sweet, Jean</creator><creator>Zhu, Frank</creator><creator>Leith, Allen</creator><creator>Pfeifer, Brian D.</creator><creator>LaRose, J. D.</creator><creator>Russell, N. M.</creator><general>American Institute of Physics</general><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0001-6815-6915</orcidid><orcidid>https://orcid.org/0000000168156915</orcidid></search><sort><creationdate>20160421</creationdate><title>Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe</title><author>Ozcan, Ahmet S. ; Lavoie, Christian ; Alptekin, Emre ; Jordan-Sweet, Jean ; Zhu, Frank ; Leith, Allen ; Pfeifer, Brian D. ; LaRose, J. D. ; Russell, N. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-89c1ebb946cd37e46b37328ec4ad871742cfc0b19e0c1d741f259e8af3fc44c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>C-MOS</topic><topic>Clusters</topic><topic>Depth profiling techniques</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>Intermetallic compounds</topic><topic>Ion beams</topic><topic>Ion implantation</topic><topic>Materials modification</topic><topic>Nickel compounds</topic><topic>Nickel silicide</topic><topic>PHYSICS OF ELEMENTARY PARTICLES AND FIELDS</topic><topic>Platinum compounds</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor device fabrication</topic><topic>Silicide</topic><topic>Silicon germanides</topic><topic>Solid solid interfaces</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ozcan, Ahmet S.</creatorcontrib><creatorcontrib>Lavoie, Christian</creatorcontrib><creatorcontrib>Alptekin, Emre</creatorcontrib><creatorcontrib>Jordan-Sweet, Jean</creatorcontrib><creatorcontrib>Zhu, Frank</creatorcontrib><creatorcontrib>Leith, Allen</creatorcontrib><creatorcontrib>Pfeifer, Brian D.</creatorcontrib><creatorcontrib>LaRose, J. D.</creatorcontrib><creatorcontrib>Russell, N. M.</creatorcontrib><creatorcontrib>Brookhaven National Lab. (BNL), Upton, NY (United States)</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ozcan, Ahmet S.</au><au>Lavoie, Christian</au><au>Alptekin, Emre</au><au>Jordan-Sweet, Jean</au><au>Zhu, Frank</au><au>Leith, Allen</au><au>Pfeifer, Brian D.</au><au>LaRose, J. D.</au><au>Russell, N. M.</au><aucorp>Brookhaven National Lab. (BNL), Upton, NY (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe</atitle><jtitle>Journal of applied physics</jtitle><date>2016-04-21</date><risdate>2016</risdate><volume>119</volume><issue>15</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4947054</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-6815-6915</orcidid><orcidid>https://orcid.org/0000000168156915</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2016-04, Vol.119 (15) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_proquest_journals_2121817823 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| subjects | Applied physics C-MOS Clusters Depth profiling techniques Epitaxial growth Epitaxy Intermetallic compounds Ion beams Ion implantation Materials modification Nickel compounds Nickel silicide PHYSICS OF ELEMENTARY PARTICLES AND FIELDS Platinum compounds Scanning electron microscopy Semiconductor device fabrication Silicide Silicon germanides Solid solid interfaces X-ray diffraction |
| title | Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T03%3A08%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Gas%20cluster%20ion%20beam%20assisted%20NiPt%20germano-silicide%20formation%20on%20SiGe&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Ozcan,%20Ahmet%20S.&rft.aucorp=Brookhaven%20National%20Lab.%20(BNL),%20Upton,%20NY%20(United%20States)&rft.date=2016-04-21&rft.volume=119&rft.issue=15&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.4947054&rft_dat=%3Cproquest_scita%3E2121817823%3C/proquest_scita%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c389t-89c1ebb946cd37e46b37328ec4ad871742cfc0b19e0c1d741f259e8af3fc44c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2121817823&rft_id=info:pmid/&rfr_iscdi=true |