Thermal transport in Cu2ZnSnS4 thin films

• Published in: Journal of applied physics 2016-03, Vol.119 (9)
• Main Authors: Thompson, W. D., Nandur, Abhishek, White, B. E.
• Format: Article
• Language: English
• Subjects: Applied physics; Cation exchanging; Composition; Crystal defects; Heat conductivity; Heat transfer; Hydrogen sulfide; Mean free path; Pulsed laser deposition; Pulsed lasers; Scattering; Stacking faults; Sulfur; Sulfur content; Sulfurization; Temperature dependence; Thermal conductivity; Thin films; Vacancies; X-ray diffraction
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.4942661

The stability of kesterite Cu2ZnSnS4 (CZTS) under a range of compositions leads to the formation of a number of stable defects that appear to be necessary for high efficiency photovoltaic applications. In this work, the impact of the presence of these defects on the thermal conductivity of CZTS thin films has been explored. Thermal conductivities of CZTS thin films, prepared by pulsed laser deposition with differing compositions, were measured from 80 K to room temperature using the 3ω-method. The temperature dependence of the thermal conductivity indicates that the phonon mean free path is limited by strain field induced point defect scattering from sulfur vacancies in sulfur deficient thin films. The sulfurization of these films in a 10% N2 + H2S ambient at 500 °C increased the sulfur content of the films, reducing the concentration of sulfur vacancies, and produced a negligible change in grain size with an unexpected factor of 5 increase in phonon boundary scattering. This, along with anisotropies in the x-ray diffraction peak profiles of the sulfurized films, suggests that the phonon mean free path in sulfurized films is limited by the presence of cation exchange induced stacking faults. The resulting room temperature thermal conductivities for sulfurized and sulfur deficient thin films were found to be 4.0 W/m K and 0.9 W/m K, respectively.