High power cascade diode lasers emitting near 2 μm

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at...

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Bibliographic Details
Published in:Applied physics letters 2016-03, Vol.108 (13)
Main Authors: Hosoda, Takashi, Feng, Tao, Shterengas, Leon, Kipshidze, Gela, Belenky, Gregory
Format: Article
Language:English
Subjects:
ABSORPTION
APERTURES
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Continuous radiation
DESIGN
Design for recycling
Design modifications
Design optimization
Diodes
EFFICIENCY
Energy conversion efficiency
GAIN
GALLIUM ANTIMONIDES
Heterostructures
HOLES
INDIUM ARSENIDES
Injectors
LASERS
LENGTH
Optical pumping
QUANTUM WELLS
Semiconductor lasers
THERMIONIC EMISSION
TUNNEL EFFECT
WAVE POWER
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Description
Summary:High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4944553