Presence of monovalent oxygen anions in oxides demonstrated using X-ray photoelectron spectra

The oxygen vacancy model has been used to explain the magnetic and electrical transport properties of dilute magnetic semiconductors and resistive switching. In particular, some authors have claimed that they found a symmetric peak corresponding to the oxygen vacancies in O1s photoelectron spectra....

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Bibliographic Details
Published in:Applied physics letters 2016-01, Vol.108 (2)
Main Authors: Wu, L. Q., Li, S. Q., Li, Y. C., Li, Z. Z., Tang, G. D., Qi, W. H., Xue, L. C., Ding, L. L., Ge, X. S.
Format: Article
Language:English
Subjects:
ANIONS
Applied physics
ARGON IONS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ETCHING
Ion etching
Magnetic properties
MAGNETIC SEMICONDUCTORS
OXIDES
OXYGEN
PEAKS
SYMMETRY
VACANCIES
X ray spectra
X-RAY PHOTOELECTRON SPECTROSCOPY
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Summary:The oxygen vacancy model has been used to explain the magnetic and electrical transport properties of dilute magnetic semiconductors and resistive switching. In particular, some authors have claimed that they found a symmetric peak corresponding to the oxygen vacancies in O1s photoelectron spectra. In this paper, using X-ray photoelectron spectra with argon ion etching, it is shown that this symmetric peak may also be interpreted as being related to O1− anions, rather than to oxygen vacancies.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4939976